AlGaInAs quantum wells for the 1300-1550 nm spectral range

The creation of highly efficient semiconductor lasers in the spectral range 1300-1550 nm is one of the important practical problems of modern quantum electronics. The leading direction in the use of such lasers is the transmission of information over an optical fiber. The improvement of these devices requires an increase in the output power, the level of which for lasers in the considered spectral range is largely determined by the design of the quantum-well active region. In particular, the introduction of elastic stresses into quantum wells of the active region helps to reduce the intensity of the Auger recombination processes and favors an increase in the output power and temperature stability. This work is aimed at finding ways to create quantum wells with an increased level of elastic stresses emitting in the region of 1300-1550 nm. The article takes into account the effect of elastic stresses on the radiation wavelength, calculates the geometry of quantum wells that provide the emission wavelength of 1300-1550 nm, determines the critical thickness of such quantum wells, above which the generation of misfit dislocations begins. Approaches for compensating elastic stresses in quantum wells have also been studied, and it has been shown that the use of barrier layers with elastic stresses of the opposite sign makes it possible to push back the generation threshold of misfit dislocations and improve the radiative efficiency.