The necessity of searching for new solutions when observing heated bodies in the temperature range of 400°...1400°C is substantiated. The features of the operation and potential characteristics of a thermal imaging measuring system for observing high-temperature objects based on a silicon CMOS sensor have been established. To create a thermal imaging system on a Sony silicon photodetector for observing high-temperature objects, the number of signal electrons formed in the photodetector at different temperatures was calculated. Silicon photodetectors are usually used for observation in the visible range of electromagnetic radiation, where objects reflect the luminous flux. It is proposed to use silicon photodetectors in the near-infrared range, where objects emit. A thermal imaging system based on a silicon photodetector has been developed. The new results obtained using it confirmed the possibility of creating a thermal imaging system based on a silicon photodetector.
$^1$Department of Television and Video Engineering, Faculty of Radio Engineering and Telecommunications, Saint Petersburg Electrotechnical University\
$^2$Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University\
$^3$All-Russian Research Institute of Metrology named after. D. I. Mendeleev
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