In this work, we study the change in the electrical characteristics of LED structures based on InGaN/GaN, caused by the flow of a large current in a pulsed mode. Stable switching between high-conductivity (resistive) and low-conductivity (diode) states, accompanied by a change in the current transfer mechanism, is found. The movement of mobile defects and the formation of conducting filaments (channels) in the space charge region are considered as the main switching mechanism.
$^1$Ulyanovsk State University
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