Application of CCD and CMOS devices in the millimeter and submillimeter wavelength ranges

The terahertz (THz) frequency range in the electromagnetic radiation spectrum occupies an intermediate position between the infrared and microwave ranges and the radiation within it has the properties of both, i.e. it has a low divergence and is able to penetrate through non-metallic materials. Currently, the existing THz radiation receivers are inert, have low spatial resolution and high cost, which raises the question of finding suitable affordable analogues. The solution may be the use of matrix photodetectors based on charge-coupled structures (CCD) and metal-oxide-semiconductor (CMOS) structures operating in the mode of tunneling photoelectrons into the conduction band due to an external laser source. The paper considers the features of registration of modulated electromagnetic radiation in the extended millimeter and submillimeter wavelength ranges using CCD and CMOS matrices.