Analysis of the stability of the field distribution in a semiconductor superlattice

In this paper, we describe an approach to the analysis of stability, based on an analysis of the dynamics of a set of the small perturbations of an inhomogeneous distribution of the electric field in superlattice. It has been found that zero value of the real part of the coefficient characterizing the propagation of the perturbation indicates the development of space-time instability. In this case, the value of the imaginary part, which determines the frequency of oscillations of the perturbation, corresponds to the frequency of the voltage fluctuations in the system. The application of the proposed technique allows us to take into account the properties of the injecting contact on the stability of the stationary distribution of the electric field. It has been found, that a decrease in the differential conductivity of the contact makes it possible to stabilize the field distribution in the system for certain values of the applied voltage.