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The effects of interminiband tunneling on complex processes in the semiconductor superlattice

А.G. Balanov$^{2,3}$, А.А. Koronovskii$^{1,2}$, О.I. Moskalenko$^{2,3}$, А.О. Selskii$^{1,2}$, А.Е. Hramov$^{1,2}$

Memoirs of the Faculty of Physics 2014. N 4.

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Annotation

Semiconductor superlattices is a compound nanostructures which are possible for using for generation and control of a highfrequency oscillations. This is important problem — the effects of the interband tunneling on the complex processes in the semiconductor superlattices. It is known that applied voltage to a superlattice reduce to formation of the electronic domains moving along the structure. In this work the oscillations of the current spectrum, coupled with domains transport through a semiconductor superlattice, are studied.

PACS:
73.21.Cd Superlattices
72.20.Ht High-field and nonlinear effects
Authors
А.G. Balanov$^{2,3}$, А.А. Koronovskii$^{1,2}$, О.I. Moskalenko$^{2,3}$, А.О. Selskii$^{1,2}$, А.Е. Hramov$^{1,2}$
$^1$Department of geoecology and geological engineering, Faculty of Ecology and Service, Yuri Gagarin State Technical University of Saratov. Saratov 410054, Russia.
$^2$Department of Open Systems Physics, Faculty of Nonlinear Processes, Saratov State University. Saratov 410012, Russia.
$^3$Loughborough University, Department of Physics Loughborough LE11 3TU.
Issue 4, 2014

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