Annotation
A self-structuring of the surface of silicon wafers under specific annealing conditions is reported on. This effect can be used for developing new maskless methods of the fabrication of structured silicon substrates, which are prospective for the use in the technology of light-emitting diodes based on gallium nitride and III–nitride solid solutions.
Received: 2013 September 5
Approved: 2014 May 26
PACS:
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Cy Elemental semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Cy Elemental semiconductors
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
M.G. Mynbaeva, S.P. Lebedev, A.A. Lavrent'ev, K.D. Mynbaev, V.I. Nikolaev
Ioffe Physical-Technical Institute of RAS. Saint–Petersburg 194021, Russia
Ioffe Physical-Technical Institute of RAS. Saint–Petersburg 194021, Russia
Science News of the Faculty of Physics, Lomonosov Moscow State University
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