In this paper effect of resistive switch for polymer materials was observed in polystyrene containing metal micro particles Al, Zn with metal concentration close to the percolation threshold. Stable – up to 106 and fast – less than 10 ns switches were obtained. Critical voltages for switching from non-conducting to conducting state for devices with contact distances less than 1 mm did not exceed 10 V. This phenomenon makes it possible to produce memory devices with assumable future down-scaling.
Department of Condensed State Physics , Faculty of Physics, M.V.Lomonosov Moscow State University, Moscow 119991,Leninskie Gory, b.1,2 Russia.
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