Determination of the amplitude defect for measuring the energy of heavy ions with semiconductor detectors

In current work the dependences of the amlitude defect of КДПС-1К detector on mass and energy were determined. Energy calibrations were performed with the 226Ra α-source and calibrational measurement with 20Ne, 36Ar, 86Kr, 132Xe beams were performed at IC-100 cyclotron at FLNR JINR. The research was carried out to measure the effective thickness of "dead layer"of the semiconductor detector and a correction has been made for energy losses in this layer. The expression for estimating corrections for an amplitude defect when measuring reaction products energies the energy range from 20 to 100 MeV and mass from 20 to 132 a.m.u.