Characteristics of the current flowing through a semiconductor superlattice for different localization of a lattice defect

The paper considers how the amplitude and frequency of current oscillations, as well as the form of current oscillations, change with a change in the localization of oscillations in the width of the conducting miniband. Semiconductor superlattices in the current fluctuation generation mode demonstrate frequencies up to several tens of gigahertz, which makes them promising transmitters in infocommunication data transmission systems. In this work, it is shown that the localization of the fluctuation of the fluctuation of the width of the conducting miniband strongly affects the characteristics of the current, while the influence of the fluctuation localization in the case of the presence of an inclined magnetic field and without it differs significantly. It is shown that a change in the miniband width in the last layer of the structure has a positive effect on the oscillatory characteristics of the current flowing through the superlattice in the absence of a magnetic field and negatively in the presence of an inclined magnetic field.