Stiffness properties modeling for uneven nanostructures in Si electronics

This work is devoted to the study of nanostructures in terms of mechanical properties. We pay special attention to the behavior of nanostructures in the presence of roughness. Research in this area goes in three directions: 1) study of the features of the manifestation of roughness during the formation of nanostructures 2) development of methods for estimating the amount of roughness (amplitude, spatial frequency, fractal constant using SEM, AFM, speckle studies) 3) modeling of mechanical, temperature properties, electrophysical properties of silicon microelectronics elements based on the above nanostructures. This work is devoted specifically to modeling [1]. With the transition to the transverse dimensions of nanostructures below 100 nm, the issue of roughness control is becoming more acute, as the influence of geometric irregularities on the electrophysical parameters of devices increases [2, 3]. In addition, with a decrease in the ratio of width to height of fin nanostructures, plastic properties begin to express themselves more and more noticeably [4, 5]. We assume that during the formation processes, this dimensional effect can make a significant contribution to the expression of nanoscale roughness. We are taking the first steps to evaluate this contribution in this paper. As a result, graphical dependences of the stiffness of the fin structure were obtained at different values of the form factor, and the analysis of the natural frequencies of the structure was carried out.