Sputtering of semiconductors by high-energy ions

This article discusses the phenomenon of sputtering: its application, history and properties. An integral part of which is the basic Zygmund’s theory, which is currently considered to be the main one in the field of ssputtering, since it takes into account the greatest number of nuances of ion sputtering. It states that the coefficient of ion sputtering Y is proportional to the cosine of the sputtering angle theta in the n degree, which depends on mass and charge. That is, theoretically, it should increase with an increase in the energy of the incident particles. When checking this statement at energies of the order of 10 keV, the theory was performed, however, experiments conducted at higher energies (80, 200, 250 and 300 keV) demonstrated that this is not the case, and in the range of 200 - 250 keV there is a significant dip in the value of coefficient.