An elastic light scattering effect on third-harmonic generation and Raman scattering in silicon nanowire arrays of different thicknesses was shown. The four- and twelvefold signal increase correspondingly for these processes in comparison with the response from monocrystalline silicon is reached. The observed growth is caused by photon lifetime increase in the medium due to multiple diffuse light scattering which take place from 2 um thickness of the silicon nanowire arrays. This assumption well agrees with spectrophotometric data and cross-correlation function measurements in the studied samples.
42.25.Fx Diffraction and scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.30.-j Infrared and Raman spectra
$^1$Moscow State University, Physics Faculty, Department of General Physics and Molecular Electronics\
$^2$Laboratory of Cryoelectronics, Faculty of Physics, M.V.Lomonosov Moscow State University.\
$^3$MSU, Faculty of Physics, Laboratory of physics methods of biosensing and nanoteranostics\
$^4$Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow 119991, Russia.\
$^5$MSU, Department of Material Science
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