LOCAL DETERMINATION OF NONEQULIBRIUM CHARGE CARRIER RECOMBI-NATION VELOCITIES IN VOLUME AND AT THE REAR SIDE OF THE SILICON WAVERS WITH P-N JUNCTIONS BY A NONCONTACT METHOD

A noncontact method for determination of recombination parameters of p(n) layer local spaces of silicon n+-p(n)-p+ structures is considered. The method is based on local illumination of investigated structure by two different absorbed light beams. At first both beams illuminate simultaneously one side of the local space of this structure and then - another side. The intensities оf the light beams are modulated so that the sum of the alternative photo-voltage becomes equal zero. Under these condi-tions the ratio of the modulation amplitudes of this light beam intensities are measured. Using such values we calculated nomograms for separate determination of the nonequilibrium charge carrier lifetimes of the illuminated p(n) local space and its surface recombination velocity at the rear side. The nomograms were calculated at wave lengths 1064 and 808 nm for thicknesses 0.4 and 0.2 mm of the p(n) layer