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Pattern analysis method for laser diode in fundamental mode

V. V. Bliznyuk$^1$, N.V. Berezovskaya$^1$, M.A. Brit$^1$, O. I. Koval$^1$, V. A. Parshin$^1$, A. G. Rzhanov$^2$

Memoirs of the Faculty of Physics 2016. N 5.

  • Article
Annotation

The method of determining the generation regime of the diode laser based the far field measurements at a fundamental mode considered. The implementation of the method for measurements of divergence angle in the two dimensional far field using the coordinates of the Gaussian function characteristic points discussed.

PACS:
42.55.Px Semiconductor lasers; laser diodes
Authors
V. V. Bliznyuk$^1$, N.V. Berezovskaya$^1$, M.A. Brit$^1$, O. I. Koval$^1$, V. A. Parshin$^1$, A. G. Rzhanov$^2$
$^1$Department of Physics, Institute of Radio Engineering and Electronics, National Research University «MPEI» Krasnokazarmennaya st., 17, Moscow 111250, Russia
$^2$Faculty of Physics, Lomonosov Moscow State University Leninskie Gory 1, b.2, Moscow 119991, Russia
Issue 5, 2016

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