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Use of the semiconductor sandwich heterostructure for the enhancement of the sub–THz generation properties

V.A. Maksimenko$^1$, V. V. Makarov$^1$, A. A. Koronovskii$^2$, A. E. Hramov$^1$, K.N. Alekseev$^3$, A. G. Balanov$^3$

Memoirs of the Faculty of Physics 2016. N 5.

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Annotation

In this paper we propose the semiconductor sandwich heterostructure for the improving of the properties of domain generation. Within the numerical study of the collective dynamics of charge we demonstrate the possibility of a simultaneous increase in the frequency and power of the current oscillations, caused by the travelling domains, due to the synchronization of the domain dynamics in the different parts of the considered semiconductor sample.

PACS:
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Rissian citation:
В.А. Максименко,  В. В. Макаров, А.А Короновский, А. Е. Храмов, К.Н. Алексеев, А. Г. Баланов.
Использование полупроводниковой сендвичной гетероструктуры для улучшения характеристик суб–ТГц генерации.
Учен. зап. физ. фак-та Моск. ун-та. 2016. № 5. 165101.
Authors
V.A. Maksimenko$^1$, V. V. Makarov$^1$, A. A. Koronovskii$^2$, A. E. Hramov$^1$, K.N. Alekseev$^3$, A. G. Balanov$^3$
$^1$REC «Nonlinear Dynamics of Complex Systems», Saratov State Technical University, Saratov, 410054, Russia
$^2$Saratov State University, Saratov, 410012, Russia
$^3$Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK
Issue 5, 2016

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