Annotation
Results of theoretical calculation of space-charge waves amplification cutoff frequency fc in thin-film n-InN and n-GaAs semiconductor structures are given in this paper. It is shown that fc is about 200 GHz for indium nitride and 55 GHz for gallium arsenide.
Received: 2015 May 29
Approved: 2016 January 20
PACS:
71.45.Lr Charge-density-wave systems
72.20.Ht High-field and nonlinear effects
72.20.Ht High-field and nonlinear effects
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
S.A. Sergeev, O.S. Senatov, B.V. Sergeeva
Saratov State University named after N.G. Chernyshevskiy. Astrakhanskaya Street, 83, 410012, Saratov
Saratov State University named after N.G. Chernyshevskiy. Astrakhanskaya Street, 83, 410012, Saratov
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