Annotation
Experimentally studied powerful semiconductor lasers based on AlGaAs/InGaAsP/InGaAs quantum well heterostructure and asymmetric extended waveguide. The proposed physical model explaining the change of lasers radiative characteristics over time.
PACS:
42.55.Px Semiconductor lasers; laser diodes
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Wi Nonlinear waveguides
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Wi Nonlinear waveguides
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
O.I. Koval$^1$, E.D. Kudrjavtzeva$^1$, A.G. Rzhanov$^2$, G.A. Solovyev$^1$
$^1$Department of Physics, National Research University «Moscow Power Engineering Institute» Moscow 112250, GSP-1, Russia
$^2$Department of Physics of oscillations, Faculty of Physics, Lomonosov Moscow State University Moscow 119991, Russia
$^1$Department of Physics, National Research University «Moscow Power Engineering Institute» Moscow 112250, GSP-1, Russia
$^2$Department of Physics of oscillations, Faculty of Physics, Lomonosov Moscow State University Moscow 119991, Russia
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