The nanotemplet technology of «SiO2 - initiation layer Al2O3 - III-nitride» on silicon substrates for non-polar III-nitride heterostructures by gas-phase deposition using organometallic compounds in the formation of GaN/InGaN quantum wells, provides the formation of arrays of GaN-InGaN nanodots and nanorings on GaN nanorods. This ensures low dislocation density, ~ 3 × 106 cm-2, the increase in the photoluminescence intensity order of magnitude compared with flat patterns and the possibility of obtaining a higher concentration of indium in the solid solution InGaN
61.46.Df Structure of nanocrystals and nanoparticles
Institute of Microdevices NAS of Ukraine. Severo-Syretska str., No 3, 04136, Kyiv,
Science News of the Faculty of Physics, Lomonosov Moscow State University
This new information publication, which is intended to convey to the staff, students and graduate students, faculty colleagues and partners of the main achievements of scientists and scientific information on the events in the life of university physicists.