Structural relaxation of coloration centers in amorphous silicon dioxide

The use of electronic and optical devices under conditions of increased ionization irradiation requires the study of defects arising in the materials from which the devices are composed. One of the most common components of such devices is silicon dioxide (SiO2), both in crystalline and amorphous form. The most common defect induced by high-power ionization radiation is the E' center. In this work, one of the existing models of the E' center structure is investigated using electron paramagnetic resonance (EPR) on different samples of amorphous silicon dioxide. The results obtained indicate the presence of two stable states of defects at high and low doses of ionization irradiation. Experimental results do not fully explain the theoretical calculations given by scientists earlier, but based on them we can assume the features of the defect structure and form a direction for further research, as well as possible options for making changes in the production technology of optical fiber to weaken the influence of this defect.