Study of the Dependence of Electrical Properties of SiNWs on the Conductivity of a Silicon Wafer

In recent years, silicon nanowires (SiNWs) have gained significant attention due to their unique electrical and optical properties, making them promising for applications in various fields, including nanoelectronics and sensors. This study presents a comprehensive analysis of SiNWs synthesized from crystalline wafers with resistances of 10–20 Ω·cm and 1–5 mΩ·cm, focusing on their electrical properties. Special attention is given to current-voltage characteristics (I-V curves), frequency-dependent conductivity, and impedance spectroscopy. These methods enable the iden-tification of key factors influencing the behavior of nanostructures and reveal correlations be-tween the properties of crystalline wafers and the electrical characteristics of the material. The results show significant changes in conductivity as the wafer resistance decreases, indicating im-proved electrical performance of the SiNWs. The I-V characteristics of samples with 1–5 mΩ·cm resistance in both planar and sandwich configurations, as well as the sandwich configuration of the 10–20 Ω·cm sample, exhibit distinct diode-like behavior, which can be attributed to potential barrier formation at the layer interfaces. Hopping conduction is found to be the dominant mecha-nism across all samples.