Investigation of inductively coupled plasma parameters during the etching of a polysilicon gate

A self-consistent 0-dimensional plasma model of the $Cl_2/Ar$ mixture is proposed under conditions typical for plasma chemical etching of a polysilicon gate. The model is based on the joint solution of the equations of chemical kinetics, plasma quasi-neutrality and power balance for steady-state plasma conditions. The solution was carried out by iteration method. The model took into account 3 types of neutral particles (Cl2, Ar, radical Cl) and 4 types of ions (Cl+, Cl2+, Ar+, Cl-). The initial composition of the mixture, the input power and the gas pressure were used as input parameters. Calculated data on the effect of the initial composition of the mixture on the physical parameters of the plasma and the concentration of active particles were obtained. The results are qualitatively consistent with the literature data.