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Luminescent and electrical properties of ultraviolet and violet light-emitting diodes based on gallium nitride based heterostructures

L.P. Avakyants$^1$, A.E. Aslanyan$^1$, P. Yu. Bokov$^1$, V. V. Volkov$^2$, I. S. Mateshev$^3$, A.N. Turkin$^3$, A.V. Chervyakov$^1$, A.E. Yunovich$^2$

Memoirs of the Faculty of Physics 2016. N 3.

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Annotation

High power ultraviolet (UV) and violet spectral region light-emitting diodes (LED) with chips based on p–n InGaN/AlGaN/GaN–heterostructures electroluminescence (EL) spectra have been studied [1, 2]. Experimental equipment based on monochromator MDR–12 has been automated; new software providing fast spectral and electrical measurements has been created. Current voltage characteristics and output radiation power dependencies have been analyzed.

PACS:
42.72.Bj Visible and ultraviolet sources
Authors
L.P. Avakyants$^1$, A.E. Aslanyan$^1$, P. Yu. Bokov$^1$, V. V. Volkov$^2$, I. S. Mateshev$^3$, A.N. Turkin$^3$, A.V. Chervyakov$^1$, A.E. Yunovich$^2$
$^1$General Physics Department,
$^2$Physics of Semiconductor Department,
$^3$Optics, Spectroscopy and Nanosystems Physics Department Faculty of Physics, Lomonosov Moscow State University. Moscow 119991, Russia
Issue 3, 2016

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