Annotation
In this work it has been experimentally and theoretically investigated the relationship between the slow degradation of high-power semiconductor injection lasers with quantum well (InGaAs/InGaAsP) and their spectra, radiation pattern and polarization of the radiation. For the theoretical description of the phenomena we use an independent channels model for generating radiation.
PACS:
42.55.Px Semiconductor lasers; laser diodes
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
V.V. Bliznyuk$^1$, M.A. Britt$^1$, I.S. Gadaev$^1$, O.I. Koval$^1$, A.G. Rzhanov$^2$, G.A. Solovyev$^1$, A.A. Starodumov$^2$
$^1$ Department of Physics, Institute of Radio Engineering and Electronics, National Research University «MPEI».Moscow 111250, Russia. Krasnokazarmennaya st., 17.
$^2$Faculty of Physics, Lomonosov Moscow State University. Moscow 119991, Russia. Leninskie Gory,1, b.2.
$^1$ Department of Physics, Institute of Radio Engineering and Electronics, National Research University «MPEI».Moscow 111250, Russia. Krasnokazarmennaya st., 17.
$^2$Faculty of Physics, Lomonosov Moscow State University. Moscow 119991, Russia. Leninskie Gory,1, b.2.
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