Regularities and features of current dependences of junction-case thermal resistance of InGaN/GaN power light-emitting diodes

On the basis of measurement of thermal characteristics on 30 sampels of power InGaN/GaN light emitting diodes (LED) of Cree production of in the range of current 50... 550 mА it is shown that thermal resistance junction-case of all LEDs increases with increase of working current. It is established that the steepness of current dependence of consid-erably decreases at currents more than 300 mА. Selective parameters of current de-pendences are calculated. The received results confirm adequacy of early offered nonlinear thermal models of power LED and can use for an estimating of heterogeneity of distribution of temperature and current density in LED's structures.