Annotation
The analysis of modern reference data for AlN, InN, GaN parameters and characteristics in comparison with GaAs ones for investigation of realization perspectives of devices on space charge waves was carried out in the work.
Received: 2013 September 4
Approved: 2014 May 5
PACS:
71.45.Lr Charge-density-wave systems
72.20.Ht High-field and nonlinear effects
72.20.Ht High-field and nonlinear effects
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
S.A. Sergeev, A.I. Mikhailov, B.V. Sergeeva
Saratov State University named after N.G. Chernyshevskiy. Astrakhanskaya Street, 83, 410012, Saratov
Saratov State University named after N.G. Chernyshevskiy. Astrakhanskaya Street, 83, 410012, Saratov
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