A model of 1D - dissipative tunneling to interpret the features of tunneling current-voltage characteristics obtained in the experiment for the visualization of the local density of states in quantum dots InAs / GaAs by a combined AFM / STM has been supposed. It was found that the influence of two local modes of the wide-band matrix on the probability of 1D - dissipative tunneling leads to the appearance of several randomly spaced peaks in the relevant field dependence. It is shown that the theoretical dependence for the tunnel probability agrees qualitatively with the experimental current-voltage characteristics of contact AFM probe to the surface of the InAs QDs.
73.00.00 Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures
73.22.-f Electronic structure of nanoscale materials and related systems
73.21.La Quantum dots
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